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IEDM: OxRRAM and d-finFET – new Samsung technologies
Another interesting message from the IEDM (International Electron Devices Meeting) conference taking place these days – Samsung presented the details of its OxRRAM technology, designed to create a new generation of non-volatile memory.
OxRRAM is the development of resistive memory technologies. This abbreviation stands for Oxide Resistive Random Access Memory. It is stated that the size of the OxRRAM cell, made in compliance with the 0.18-micron technical process, is 0.2 sq. μm, maximum number of write cycles – 100, supply voltage – up to 3 V, switching current – 2 mA.
In addition, together with Infineon, Samsung announced the development of new approaches to creating small-scale random access memory (DRAM) using d-finFET technologies (damascene-finFET, non-planar field-effect transistors). Moreover, Samsung claims that it was able to create a 512 Mbit DRAM chip using 80nm d-finFET technology.