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Elpida demonstrates DRAM chips with reduced self-regeneration current
The Japanese company Elpida announced the beginning
supply of samples of 256 Mbit DDR SDRAM components made using
proprietary Super Self Refresh (SSR) technology that achieves 95% reduction
self-regeneration current (IDD6) – in order to increase the battery life
portable consumer electronic devices. SSR allows you to increase the internal
update interval due to operation with Error Correction Circuit (ECC). Using
built-in thermal sensor, ATCSR, SSR automatically adjusts the period
self-regeneration at different temperatures. Microcircuits made by technology
SSR, self-regenerating 40 μA at 25 ° C, 150 μA –
at 70 ° C, 250 μA at 85 ° C, which is approximately 1/20 of the current consumed
with self-regeneration by microcircuits without SSR.
256 Mbit Elpida components with SSR are represented by models EDD2516KCTA-5C, EDD2516KCTA-6B,
EDD2516KCTA-7A, have 4M words x 16 bits x 4 bank organization. Solutions match
JEDEC requirements (throughput – up to 400 Mbit / s, supply voltage
– 2.5V, CAS Latency (CL) 2 / 2.5 / 3, Burst Length (BL) 2, 4,
eight. The microcircuits are made using the 0.11-micron technical process standards, are offered
in 66-pin plastic TSOP packages. Start of serial production of 256
and 512 Mbit components with SSR are planned for March this year.